PART |
Description |
Maker |
HN27C4000G |
524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM 262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc. SONY
|
GM71C4256B |
262144 word x 4 Bit CMOS DRAM
|
LG
|
M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
http:// RENESAS[Renesas Electronics Corporation]
|
M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT |
Memory>Low Power SRAM 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
GM71C4256BJ GM71C4256BJ-70 GM71C4256B GM71C4256BZ- |
262144 word x 4 Bit CMOS DRAM New Generation Dynamic RAM
|
GoldStar LG[LG Semicon Co.,Ltd.] http://
|
HM624256AJP-25 |
262144-word x 4-bit High Speed CMOS Static RAM
|
Renesas Technology / Hitachi Semiconductor
|
M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
M66287FP |
262144-word x 8-bit x 3-FIELD MEMORY
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|